Structural and chemical properties of InAs layers grown on InP(100) surfaces by arsenic stabilization

Abstract

The structure of arsenic stabilized InP surfaces prepared by annealing InP under an arsenic pressure is examined using reflected high-energy electron diffraction, x-ray photoelectron spectroscopy, and x-ray photoelectron diffraction (XPD). It is shown that 1.3–2.6 monolayers of strained InAs are formed on the InP surface when the annealing temperature ranges from 450 to 575 °C. XPD patterns are used to distinguish between arsenic atoms located in the first, second, and third InAs layer. A surface structural degradation is shown to occur at 575 °C.