Abstract
The structure of both Si (100)in situ thermally annealed Si (100) at 1373 K and Si (100) exposed to dry oxygen at room temperature in the range 5 to 1700 Langmuirs, have been studied using time of flight and recoiling spectroscopy (TOF-SARS). Structural analyses were performed by recording the intensities of recoiled oxygen and silicon ions as a function of azimuthal angle. The results show that (1) the clean annealed Si (001) is dimerized, (2) oxygen chemisorbs at the surface at the Si-unsaturated bond, which are left unoccupied after the (2×1) reconstruction, and (3) at 100 L and above the Si surface is reconstructed into a (1×1) structure with the oxygen binding to the broken Si-Si dimer bonds.
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