Structural analysis of the chemical vapour deposition grown molybdenum disulphide nanofilms for multifaceted applications

Sonakshi Saini

doi:10.17485/ijst/v13i29.1215

Abstract

Background/Objectives: In recent years, the research on molybdenum disulphide (MoS2) has gained significance because of its unique properties and ease of incorporation in hybrid structures, which makes it one of the most suitable materials for devices and multifaceted Applications. The objective of the study is to synthesize MoS2 nanofilms and then to characterize them through X-ray diffraction (XRD) technique. Methods: In this study, MoS2 nanofilms are synthesized on silicon dioxide substrates by the thermal Chemical Vapour Deposition (CVD) technique, where molybdenum trioxide (MoO3) (VI) powder and sulphur (S) flakes are used as precursors. Findings:X-ray diffraction (XRD) measurements have been carried out for the thermal CVD grown MoS2 nanofilm samples. Further, the observed XRD data has been analyzed and the structural analysis of synthesized MoS2 nanofilms is presented in this report. Furthermore, the experimentally observed findings are compared with the standard findings and shown that they are resembling closely. Novelty/Applications: In order to highlight the scope of our work, the important applications, of the molybdenum disulphide nanostructures are also discussed, that make MoS2 nanostructures attractive candidates in fields as diverse as energy, environmental, biomedical and semiconductors. Keywords: Chemical vapour deposition; molybdenum disulphide; nanofilms;XRD; transition metal dichalcogenide

Highlights

Molybdenum disulphide (MoS2) is a transition metal dichalcogenide that has gained widespread popularity among nanomaterials owing to its extraordinary properties [1,2,3,4,5] and resulting applications in fields ranging from memory devices [6,7], environmental [8] and biomedical applications [9] to optoelectronics [10] and transistors [11]
Gaussian line profiling was performed for each peak using Origin software and the full width at halfmaximum (FWHM) of the profile, area, and height values calculated for each Bragg line
Molybdenum disulphide (MoS2) nanofilms are successfully synthesized on silicon dioxide substrates by the thermal Chemical Vapour Deposition (CVD) technique, using molybdenum trioxide (MoO3) (VI) powder and sulphur (S) flakes as precursors

Summary

Introduction

Molybdenum disulphide (MoS2) is a transition metal dichalcogenide that has gained widespread popularity among nanomaterials owing to its extraordinary properties [1,2,3,4,5] and resulting applications in fields ranging from memory devices [6,7], environmental [8] and biomedical applications [9] to optoelectronics [10] and transistors [11].The need for smaller, more efficient electronic devices has made two dimensional (2-D) materials a focal point of research in materials science. Molybdenum disulphide (MoS2) is a transition metal dichalcogenide that has gained widespread popularity among nanomaterials owing to its extraordinary properties [1,2,3,4,5] and resulting applications in fields ranging from memory devices [6,7], environmental [8] and biomedical applications [9] to optoelectronics [10] and transistors [11]. Saini et al / Indian Journal of Science and Technology 2020;13(29):2973–2980 and optical performance, and exploitable thermal stability It is still far from being an ideal material for small scale transistors, owing to the absence of an electronic band gap [12,13,14,15,16,17,18,19,20,21,22]. MoS2 nanostructures from monolayers to bulk have been fabricated on a various number of rigid as well as flexible substrates by utilizing a variety of methods such as mechanical exfoliation, electrochemical exfoliation, thermal vapour sulphurisation of molybdenum or CVD of molybdenum oxide (MoO3) and decomposition of thiomolybdates [23,24,25,26,27,28]

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