Abstract
GaN layers with columnar structures were grown by electron–cyclotron resonance (ECR) plasma-excited molecular beam epitaxy (MBE) with hydrogen–nitrogen-mixed gas plasma. The structure and defect characteristics of the GaN layers were investigated using scanning electron microscopy and transmission electron microscopy. The columnar structures showed a crystallographic hexagonal shape with a density of 2.8×10 9/cm 2 and a size of 50–200 nm. The surface of the columns had hexagonal pyramids with {1 0 1 ̄ 1} facets. A high density of stacking faults parallel to (0 0 0 1) plane was observed in the columnar domains. The relationship between the formation of stacking faults and the effect of hydrogen on ECR-MBE GaN growth was discussed.
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