Structural Analysis and Infrared Emission from Ti+3 Doped AlN Deposited on Si(100) and Si(111) Substrates and Optical Fibers

Abstract

Thin films of AlN doped with Titanium are deposited on Si(100) and Si(111) substrates and optical fibers at liquid nitrogen temperature by rf-magnetron sputtering. Thickness of the films is 400 nm on both silicon substrates and optical fibers. X-ray diffraction studies show that films deposited on both Si(100) and Si(111) substrate are amorphous, and those deposited on optical fibers are crystalline under the same conditions. The results indicate that low temperature is not the only requirement to grow amorphous films but the size and shape of substrate also affect the structure and morphology of a thin film material. X-Ray Fluorescence and Photoluminescence of the as-deposited AlN:Ti films report an emission peak at 781 nm as a result of 4T2 $$\rightarrow $$ 4A2 transition. A relatively less intense emission is also observed at 785 nm. The fluorescence emission from Ti+3 is proved to be isotropic.