Structual and Dielectric Properties of Pb(Zr<inf>0.53</inf>Ti<inf>0.47</inf>)O<inf>3</inf> Thin Films Grown on LaNiO<inf>3</inf> Buffered Si Substrates

Abstract

Ferroelectric Pb(Zr0.53Ti0.47)O3 thin films with thickness of around 800 nm were prepared on LaNiO3 (LNO) buffered SiO2/Si substrates by sol-gel method. The LNO buffer layer serves as the bottom electrode and the template for growing PZT thin films with preferred orientation. The (110)-textured PZT thin films can be obtained on 250 nm-thick LNO buffered SiO2/Si substrates. Upon using the LNO buffer layer, the annealing temperature of the PZT films is lowered to 600degC. Our results indicate that PZT thin films prepared on LNO buffered Si substrates have good structural and dielectric properties for sensor and actuator applications.