Abstract
We introduce and investigate a special regime of terahertz generation in electro-optic crystals with ultrashort laser pulses, in which neither phase-matching nor Cherenkov radiation mechanism are efficient. This regime occurs under the conditions that the optical group refractive index is larger than the low-frequency phase refractive index of the crystal, and the spectral bandwidth of the laser pulse is smaller than the frequency of the phase-matched terahertz wave. In this regime, that can be realized for a Ti:sapphire laser in GaP, terahertz generation is provided by transient processes at the crystal boundaries. We study the peculiarities of the terahertz emission from a slab of GaP excited with a Ti:sapphire laser. In particular, we demonstrate a possibility to implement a pointlike source of terahertz radiation that can increase the resolution of terahertz apertureless near-field microscopy.
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