Abstract
InGaAsP MQW electroabsorption modulators with and without compensated strain were fabricated and tested. Compensated strain was employed to reduce the valence band discontinuity between the well and barrier, which decreased the heavy-hole carrier escape time. A short optical pulse coupled into the modulator was used to measure the enhancement in carrier escape time from strained compensated InGaAsP quantum wells, for the first time. As a result, the strained MQW sample demonstrated an improved frequency response when operated at high optical input powers and low fields.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
