Strongly Coupled Single-Quantum-Dot–Cavity System Integrated on a CMOS-Processed Silicon Photonic Chip

Abstract

Quantum photonic integrated circuit (QPIC) is a promising tool for constructing integrated devices for quantum technology applications. In the optical regime, silicon photonics empowered by complementary-metal-oxide-semiconductor (CMOS) technology provides optical components useful for realizing large-scale QPICs. Optical nonlinearity at the single-photon level is required for QPIC to facilitate photon-photon interaction. However, to date, realization of optical elements with deterministic( i.e., not probabilistic) single-photon nonlinearity by using silicon-based components is challenging, despite the enhancement of the functionality of QPICs based on silicon photonics. In this study, we realize for the first time a strongly coupled InAs/GaAs quantum dot-cavity quantum electrodynamics (QED) system on a CMOS-processed silicon photonic chip. The heterogeneous integration of the GaAs cavity on the silicon chip is performed by transfer printing. The cavity QED system on the CMOS photonic chip realized in this work is a promising candidate for on-chip single-photon nonlinear element, which constitutes the fundamental component for future applications based on QPIC, such as, coherent manipulation and nondestructive measurement of qubit states via a cavity, and efficient single-photon filter and router.