Abstract
A Ge(111) p-n structure is epitaxially grown on a Si(111) substrate, where in-situ doping of Phosphorus (P) and Boron (B) is carried out. Also, P δ-doping is performed near the surface to make low-resistivity ohmic contacts. As a result, we obtain strong electroluminescence (EL) emissions at room temperature from fabricated Ge-on-Si(111) vertical light emitting diodes (LEDs) Post-growth annealing is effective to significantly enhance the EL intensity. It is implied that diffusion and re-distribution of the P donor atoms after the annealing play important roles for the EL intensity enhancements.
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