Abstract
MoS2 has attracted considerable attention given its excellent optoelectronic properties arising from the quantum size effect. Intrinsic defects, especially sulfur vacancies, are common in the as-prepared MoS2 monolayer, significantly restricting monolayer photoluminescence. An efficient method is reported in this paper to passivate the sulfur vacancies of the MoS2 monolayer through low-power-density Ar/O2 plasma treatment. The photoluminescence spectrum shows a dramatic enhancement of ∼150 times, attributed to the transition from trion to exciton and the inhibition of a non-radiative recombination of photo-excitons. Measurement results indicate the formation of Mo-O bonds in the plasma-treated MoS2 monolayer without an obvious etching effect. The strong photoluminescence intensity of the monolayer may have promising applications in optoelectronic devices.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.