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Abstract
All-dielectric metamaterials offer great flexibility for controlling light-matter interaction, owing to their strong electric and magnetic resonances with negligible loss at wavelengths above the material bandgap. Here, we propose an all-dielectric asymmetric metasurface structure exhibiting high quality factor and prominent Fano line shape. Over three-orders photoluminescence enhancement is demonstrated in the fabricated all-dielectric metasurface with record-high quality factor of 1011. We find this strong emission enhancement is attributed to the coherent Fano resonances, which originate from the destructive interferences of antisymmetric displacement currents in the asymmetric all-dielectric metasurface. Our observations show a promising approach to realize light emitters based on all-dielectric metasurfaces.
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