Abstract
Photoinduced infrared absorption spectra, excited by an Argon laser, have been measured from 2.5 to 15 μm in high-quality bulk GaP at liquid helium and room temperatures. The broad spectra, together with photoluminescence and photoconductivity data, show how transitions from donor and acceptor levels to the adjacent bands by trapped nonequilibrium electrons and holes dominate the induced absorption at low temperature in the unintentionally doped material.
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