Abstract
Two-dimensional materials have attracted a lot of attention in the field of electronics due to their unique electronic properties. With the development of defect physics, attention has been paid to how defects affect and control the electrical properties of two-dimensional materials by functionalizing defects into two-dimensional devices. We introduced defects into α-In2Se3 nanosheets by Ar2+ ion irradiation and artificially created defects in the atomic layers. Different defect types (single selenide vacancy defects, diselenide vacancy defects, and chain selenide vacancy defects) produced at different irradiation fluxes were identified by microscopic methods such as transmission electron microscopy. The defects affected the carrier mobility and the forbidden band width of the nanosheets, which improved the photodetection capability. The chain selenide vacancies have the greatest effect on α-In2Se3 phototransistors, increasing Iph, R, EQE and D* to 455%, 455%, 455% and 110% of the initial values, respectively.
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