Abstract
Strained CoPt films have been deposited on TiN intermediate layers with single crystal MgO as the substrate. At a thickness of 2.5 nm, CoPt films grow epitaxially on the TiN layer while being strained horizontally. On the other hand, the 10 nm sample is partially relaxed by misfit dislocations. Different strain conditions result in different c/a ratios of the respective lattices. With a c/a ratio of 0.974, the 2.5 nm CoPt film with a perpendicular coercivity of 11 kOe could be obtained at a temperature (400°C) much lower than the usual fabrication temperature (∼800°C). The broken symmetry induced by the lattice distortion is believed to be the main source of the perpendicular magnetization. This study may open new possibilities of fabricating CoPt based magnetic recording media at lower temperatures.
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