Abstract
Strong exchange bias (EB) in perpendicular direction has been demonstrated in vertically aligned nanocomposite (VAN) (La0.7Sr0.3MnO3)1−x : (LaFeO3)x (LSMO:LFO, x = 0.33, 0.5, 0.67) thin films deposited by pulsed laser deposition. Under a moderate magnetic field cooling, an EB field as high as ∼800 Oe is achieved in the VAN film with x = 0.33, suggesting a great potential for its applications in high density memory devices. Such enhanced EB effects in perpendicular direction can be attributed to the high quality epitaxial co-growth of vertically aligned ferromagnetic LSMO and antiferromagnetic LFO phases, and the vertical interface coupling associated with a disordered spin-glass state. The VAN design paves a powerful way for integrating perpendicular EB effect within thin films and provides a new dimension for advanced spintronic devices.
Highlights
Strong exchange bias (EB) in perpendicular direction has been demonstrated in vertically aligned nanocomposite (VAN) (La0.7Sr0.3MnO3)1−x : (LaFeO3)x (LSMO:LFO, x = 0.33, 0.5, 0.67) thin films deposited by pulsed laser deposition
Such enhanced EB effects in perpendicular direction can be attributed to the high quality epitaxial co-growth of vertically aligned ferromagnetic LSMO and antiferromagnetic LFO phases, and the vertical interface coupling associated with a disordered spin-glass state
We investigated the co-growth of FM LSMO (a = 3.87 Å, pseudo-cubic) and AFM LaFeO3 (LFO, a = 3.940 Å, pseudo-cubic) on SrTiO3 (STO, a = 3.905 Å) substrate to explore EB effect in the perpendicular direction
Summary
Strong exchange bias (EB) in perpendicular direction has been demonstrated in vertically aligned nanocomposite (VAN) (La0.7Sr0.3MnO3)1−x : (LaFeO3)x (LSMO:LFO, x = 0.33, 0.5, 0.67) thin films deposited by pulsed laser deposition.
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