Abstract
A formation mechanism for the naturally formed {212121} monolayer superlattice (SL) on the column III sublattice, which has been observed in Ga0.5In0.5P and (AlxGa1−x)0.5In0.5P grown by metalorganic vapor phase epitaxy (MOVPE), is proposed. The proposition is based on the experimental results for the substrate orientation dependence of the appearance asymmetry of the four equivalent {212121} SLs. The mechanism is related to (1) the intra-plane ordering on (001) planes and (2) the inter-plane ordering for the successive (001) ordered planes. The intra-plane ordering is thought to be caused by the anisotropic site occupation affinity for column III atoms due to both a large bond-length difference and a dangling-bond direction asymmetry on the (001) surface. The cause of the inter-plane ordering is attributed to the “phase-locking” role of the [110] atomic steps. The mechanism seems to be well applicable to the explanation for the appearance asymmetry of the {212121} SLs for other kinds of alloy semiconductors, such as GaInAs, GaAsSb and GaInPAs grown by vapor phase epitaxy and molecular beam epitaxy, as well as for MOVPE grown AlGaInP alloys. The MOVPE growth condition dependence of the SL formation for Ga0.5In0.5P is also discussed.
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