Abstract
Sharp, strong luminescence has been obtained from erbium in silicon-germanium quantum well structures. The quantum well layers were implanted with erbium, followed by amorphisation using a silicon implant at 77 K. The structures were then recrystallised by solid phase epitaxial regrowth at 550/spl deg/C. Compared with bulk silicon systems, stronger erbium activity was observed in the quantum well host.
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