Abstract
Cadmium selenide nanoparticle films were deposited on usual glass substrate by chemical bath deposition method. Temperature dependence of dc conductivity of the present samples was studied. In the nanocrystalline materials due to small size of grains and confined charge carriers, the electronic states near the Fermi level are localized. When states are localized, the conduction occurs by hopping of carriers between the occupied and unoccupied localized states. Variable range hopping was identified as a predominant conduction mechanism and occurs above room temperature. The density of localized states near the Fermi level was observed to increase with increase of average grain size in the film.
Highlights
In disordered materials, such as amorphous semiconductor or some thin films, low temperature transport occurs between localized electronic states near the Fermi level (EF)
We suggest that the samples made by this method have a convenient characteristic for the investigation of nanosensing properties, because the density of state and electrical conduction change by external subject
The charge carriers confined inside the nanoparticles, due to the reduction of grains size the electronic states close to the Fermi level, are localized
Summary
In disordered materials, such as amorphous semiconductor or some thin films, low temperature transport occurs between localized electronic states near the Fermi level (EF). This transport depends on the density of states (DOS), location of Fermi level, and the temperature. High quality CdSe nanocrystals can be fabricated by several techniques such as electrodeposition, evaporation, and chemical bath deposition. CBD method is presently attracting considerable attention as it does not require sophisticated instrumentation. It is relatively inexpensive, easy to handle, convenient for large area deposition, and capable of yielding good quality thin films.
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