Abstract
An in-plane magnetic field B∥, added to a perpendicular one B⊥, and applied to the quasi-two-dimensional electron gas at the GaAs/AlGaAs heterojunction, may increase the cyclotron effective mass mc∗ due to the distortion of the Fermi contour by B∥. We study the increase of mc∗(B∥) by the Shubnikov-de Haas effect, for the first time for five different ratios B∥/B⊥, ranging from 1.5 to 13 (compared to the one ratio of 6.0 in an earlier investigation). The observed field dependence extends from mc∗=0.067m0 for B∥=0T to mc∗=0.1m0 for B∥=13T. This drastic increase of mc∗(B∥) of 50% is caused not only by the higher applied in-plane field, but rather by the stronger field dependence of the carriers with a density of n=1.7×1011cm−2. We discuss our results, also in view of spin splitting and magnetophonon resonance measurements in tilted magnetic fields.
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