Abstract
Due to their ability to produce high electric field enhancements in relatively large nanoscale volumes with minimum absorption and nonradiating properties, anapole modes excited in high index dielectric nanostructures have attracted considerable attentions in these years. We propose a design strategy to simultaneously excite the anapole mode efficiently and maintain its resonant wavelength, which has been remained as a challenge in the conventional dielectric nanostructures. Based on analyzing the relationship between the field enhancement factor and scattering intensity of the electric and toroidal dipoles, we introduce two and four nanocuboids into the nil field intensity areas in the silicon disk system, respectively. The geometric volume of the system can be increased effectively and the electric field enhancement is boosted to be 190% and 250% while the resonant wavelength of the anapole mode is almost maintained constant. The systems combined with a slot in the strongest field intensity area also follow the same law, revealing that the design strategy can be easily extended to other geometric, material and frequency systems. Different from the design strategy to add new components into the areas with strong field intensity, the incorporations occurring at the minimum intensity area is another design scheme to engineer the properties of the resonant systems and can find broad applications in nano-device designs.
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