Abstract
The generation of a dense electron-hole plasma by an intense short laser pulse is investigated by solving the semiconductor Bloch equations. The kinetikcs of plasmons on a sub-ps time scale is demonstrated to be important for the relaxation and dephasing behaviour in comparison to a simple static treatment of screening under the considered excitation conditions with carrier densities in the range of 10 17 to 10 18 cm -3 for GaAs. Strong dephasing is found particularly for the early stage of the excitation, when the pulse is rising. However, peak scattering with dephasing times below 10 fs as shown by Scott et al. to be possible for strongly peaked nonequilibrium carrier distributions is small wavenumbers. Scattering of the coherent polarization at the carriers reduces the decay of polarization in comparison with the dephasing-rate approximation, where it is generated by carrier-carrier scattering only. Moreover coherent scattering decreases the generation rate of carriers in the presence of the pulse resulting in a strongly reduced final carrier density.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
