Abstract
We present experimental results demonstrating strong-light matter coupling at low and room temperature in bulk GaN microcavities with epitaxial (Al,Ga)N Bragg mirrors grown on silicon (111). At low temperature, the strong coupling of both the $A$ and $B$ excitonic features of GaN with the cavity mode is clearly resolved in the microcavity. At room temperature a Rabi energy of $50\phantom{\rule{0.3em}{0ex}}\mathrm{meV}$ is observed and well reproduced using transfer-matrix reflectivity calculations describing the interaction of both the $A$ and $B$ excitonic states with the photonic mode.
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