Abstract
AbstractThe surface passivation of colloidal quantum dots (CQD) is critical for the electronic coupling of CQDs, which significantly affects the photovoltaic performance of CQD solar cells (CQDSCs). Herein, a self‐assemble passivation (SAP) strategy of CQDs is introduced to improve CQD coupling. The PbI2 passivation layer prepared using the SAP method can largely improve surface defect passivation of CQDs, diminishing charge recombination induced by the sub‐bandgap traps. Meanwhile, extensive theoretical simulations reveal that the self‐assembled PbI2 passivation layer works as a “charger bridge” for charge transport between the adjacent CQDs, avoiding CQD fusion. The infrared CQDSCs are fabricated and the SAP‐based CQDSC yields an efficiency of up to 12.3%, which is significantly improved compared with that of the conventional CQDSCs with iodide passivating CQD surface. The improved photovoltaic performance in the SAP‐based CQDSCs is attributed to increased charge extraction, resulting from strong CQD coupling within the CQD solid films. This work provides a simple and facile way to improve the electronic coupling of CQDs for high‐performance infrared CQDSCs.
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