Abstract
This paper report the relationship between B-Al-N doping concentration fluctuation and photoluminescence effects of fluorescent 4H-SiC single crystals. The photoluminescence emission properties, dopant concentration, and internal quantum efficiency of B, Al and N co-doped 4H-SiC are characterized. It is found that the emission spectra exhibit a wide band that covers from about 450 nm to 750 nm. The peak intensity of the emission spectra is strongly affected by B, Al and N concentrations. By further analyses the roles of B-Al-N dopants, a hypothetical formula is proposed, which can help to profile the strong correlation between photoluminescence effects and B-Al-N doping concentrations.
Highlights
In recent years, fluorescent silicon carbide ( f -SiC) have attracted extensive attentions for its excellent photoelectric properties, which can be applied as a phosphor layer in solid-state lighting device.[1,2] SiC single crystal has a wide band gap (3.0 eV for 6H-SiC, 3.2 eV for 4H-SiC),[3,4] which can produce outstanding wavelength down conversion properties by adopting energy band gap tailoring technology
High quality B-Al-N co-doped fluorescent 4H-SiC single crystals are grown by physical vapour transport (PVT) method and their photoluminescence properties are studied in this paper
The photoluminescence emission spectra indicate that the emission spectra of B-Al-N co-doped f -SiC cover from about 450 nm to 750 nm, and the peak intensity is increased with improving the B, Al and N dopant concentration
Summary
Fluorescent silicon carbide ( f -SiC) have attracted extensive attentions for its excellent photoelectric properties, which can be applied as a phosphor layer in solid-state lighting device.[1,2] SiC single crystal has a wide band gap (3.0 eV for 6H-SiC, 3.2 eV for 4H-SiC),[3,4] which can produce outstanding wavelength down conversion properties by adopting energy band gap tailoring technology. SiC single crystal shows excellent thermal conductivity, well chemical stability, etc. Based on these material properties, SiC single crystal will overcome some critical challenges in the field of white light-emitting diodes (W-LED). SiC single crystal is an indirect band gap semiconductor, and have more than 200 crystalline structures, such as 3C-, 4H-, 6H-, and 15R-, etc This makes the electron-hole pair recombination quite complicated while introduced deep or shallow donor-acceptor impurity energy levels in the band gap.[15] it is quite necessary to identify the factors that affect the luminescence properties of f -SiC before it is widely used in LED devices. The main aim is to clarify the correlation between B-Al-N dopant concentrations and the photoluminescence effects
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