Abstract
The Eu-doped SiOC films were prepared by magnetron sputtering technique at a low temperature of 250°C. The effects of the Eu 2 O 3 deposited power and post-thermal annealing temperature on the PL characteristics of the Eu-doped SiOC films were investigated. It is found that the photoluminescence intensity could be enhanced by more than tenfold by increasing the Eu 2 O 3 deposited power from 20W to 80W. Furthermore, very bright blue light emission can be clearly observed with the naked eye in a bright room for the Eu-doped SiOC films prepared at a Eu 2 O 3 deposited power of 80 W. The improved PL intensity is attributed to the increasing number density of europium silicate clusters as a result of the increasing Eu 2 O 3 deposited power as well as high annealing temperatures.
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