Abstract
We study the lateral electrical transport in free-standing porous silicon films prepared by anodic etching of heavily boron-doped (110) Si wafers. It is shown that the lateral dark conductivity and photoconductivity are significantly higher along the [10] in-plane crystallographic direction than that along the [001] one. The electrical transport anisotropy decreases under light illumination and with increasing temperature. The experimental results are explained by using an effective-medium approximation and taking into account potential barriers between anisotropic Si nanocrystals assembling the films. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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