Abstract
The suppression of lattice thermal conductivity of thermoelectric CuInTe2 was often realized by complex micrometer-structure control. Herein, we demonstrate that simple alloying AgSbTe2 in CuInTe2 is capable of strongly strengthening lattice anharmonicity, which gives rise to an extremely low lattice thermal conductivity of ∼ 0.62 W m−1 K−1 at 823 K for (CuInTe2)0.95(AgSbTe2)0.05. In addition, the intentionally introduced copper vacancies can effectively increase the carrier concentration and dramatically improve the electrical performance of (CuInTe2)0.95(AgSbTe2)0.05. As a result, the sample with nominal composition of (Cu0.95InTe2)0.95(AgSbTe2)0.05 reaches a maximum zT value of ∼ 1.3 at 823 K. This study provides some insight into designing thermoelectric compounds in the diamond-like semiconductor family by inducing strong anharmonicity through a small amount of alloying.
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