Abstract
AbstractStrong and narrowband terahertz (THz) radiation is obtained from a GaAs‐based pseudomorphic high‐electron‐mobility transistor (pHEMT). The radiation properties with respect to the bias conditions and operating temperature are extensively characterized. The maximum emission power is measured to be 63 and 278 μW at room temperature and 77 K, respectively. By using the THz radiation from the pHEMT, a metal object hidden in cloth was successfully imaged.
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