Abstract
Porous silicon doped by erbium electrodeposition or from spin-on silica gel film followed by rapid thermal processing at 950 °C or higher exhibited liquid-nitrogen and room-temperature luminescence at 1.54 μm. The full width at half maximum was about 0.01 eV at 77 K. The mechanism of light emission from erbium-doped porous silicon is proposed. The direct bandgap of nanocrystallites in porous silicon is considered to provide an effective pumping media.
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