Abstract
In Bloch line memories [1], one of the problems consists to stabilize stripe domains which are used as storage loops. We propose to perform this stabilization with a periodic stress field induced at the garnet surface. Two experimental methods are studied: evaporation of Cr bars (which are in tensile stress) and Ne + ion implantation on similar patterns (zones in compressive stress). We could observe that stripes are nucleated in certain regions as predicted by a model described in this paper. The stripes alignment is stable over a wide range of vertical field and depends weakly on wall orientation relative to cristallographic axes.
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