Abstract

Strain engineering is generally employed as an efficient means of tuning the physical properties of a target compound. In this research paper, we investigated the effect of three axial stretches on the structural, electronic, optical, and thermoelectric properties of inorganic Ge-based halide perovskites LiGeBr3. Computations were carried out using Density Functional Theory (DFT) and the semi-classical Boltzmann transport theories. The electronic investigation indicated that LiGeBr3 perovskite exhibits a direct bandgap of 0.480[Formula: see text]eV. The findings suggest that the bandgap is highly responsive to strain, which improves the absorption ability in the visible light range (300–500[Formula: see text]nm). The relative stability of the strained compounds and the feasibility of their synthesis were robustly demonstrated by the negative formation energies. The transport features were assessed as a function of temperature and yielded interesting results. The electrical conductivity was considerably enhanced under strain, and the highest figure of merit was found at low temperatures (approximately 0.741). Our theoretical discovery proved that strain is an enormously exciting technique for extending semiconductor applications and boosting thermoelectric and solar cell devices.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call