Abstract
The high stress SiNx thin film deposition technology is widely used in nano-scale transistor structure to induce strain and improve the carrier transport in the channel region. In this work, the synthesis and process of high tensile stress SiNx thin films have been studied. High tensile stress SiNx thin film is obtained by multiple treatment of N2 plasma. The optimized SiNx films was integrated into the 26 nm transistors and found that the driving current Idsat was improved by 27%.
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