Year-end Sale % OFF 
Abstract
The problems of increasing the reliability of microelectromechanical systems are considered on the example of an automobile voltage regulator. A model of the process is proposed and a study of the effect of temperature on the formation of stress fields in semiconductor structures of active elements of the controller is carried out. The studies assumed of a possible reason for the change in the parameters of the regulator due to the appearance of defects in the crystal structure of the semiconductor material in the structures of integrated voltage regulators. For the study, a mathematical model was proposed that describes the behavior of a semiconductor element of a real car voltage regulator. It was found that the distribution of stresses in the structures is uneven and the maximum value of stresses reaches the edges., An increase in temperature gradients in the structures of regulators leads to the formation of dislocations that change the electrical characteristics of devices. As a result of modeling, it has been established that thermoelastic stresses arising in the process of manufacturing and functioning of semiconductor structures of a regulator in regulators of this type can cause a change in the structure of a semiconductor device due to relaxation of elastic stresses at dislocations. in cars. Measures are proposed, including thermostating of the sensitive elements of microelectromechanical structures, which will increase their service life.
Highlights
The problems of increasing the reliability of microelectromechanical systems are considered on the example of an automobile voltage regulator
The studies assumed of a possible reason for the change in the parameters of the regulator due to the appearance of defects in the crystal structure of the semiconductor material in the structures of integrated voltage regulators
A mathematical model was proposed that describes the behavior of a semiconductor element of a real car voltage regulator
Summary
Для исследования была предложена математическая модель, описывающая поведение полупроводникового элемента реального регулятора напряжения автомобиля. 1. Поскольку исходная структура содержит слои, толщины которых различаются на порядки, а влияние тонких слоев пренебрежимо мало на систему в целом, то она была упрощена без потери информативности по методике, описанной в работе [18] Параметры слоев упрощенной структуры приведены в табл. Параметры слоев интегрального регулятора напряжения [The parameters of the layers of the integrated voltage regulator]. В процессе эксплуатации регуляторов напряжения, его составляющие слои подвергаются температурному воздействию и могу нагреваться до температур, значения которых приведены ниже. Из-за воздействия температуры и различных температурных коэффициентов расширения материалов регулятора, его элементы подвергаются воздействию упругих механических напряжений. Поэтому для их расчетов в качестве параметров модели были использованы температуры, до которых нагреваются слои
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
