Abstract
Thin film technology is a relatively young and ever-growing field in the physical and chemical sciences, which is confluence of materials science, surface science, applied physics and applied chemistry. Thin film technology has its objectives in the provision for scientific bases for the methods and materials used in thin film electronics (integrated circuits and micro-electro-mechanical system). Additionally, it provides a sufficient data in the area of applications to permit for understanding of those aspects of the subject that might still be termed an “art”. Thin films of metals were probably first prepared in asystematic manner by Michael Faraday, using electrochemical methods. Thin films go through several distinct stages during growth, each affecting the resulting film microstructure and internal stress. Hence before proceeding to synthesis and characterization, the knowledge of formation, growth and stress generation in thin film is necessary. This paper explains the influence of process parameters on stress in silicon nitride (Si3N4) thin films with experimental results.
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