Stress voltage dependence HCI induced traps distribution in 60V LDNMOS

Abstract

In this paper, lateral interface trap (N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">it</sub> ) distribution using variable top charge pumping (CP) technique is determined to present the mechanism of hot carrier degradation of 60V LDNMOS, processed in 0.42um technology. This is also correlated using TCAD simulation of hot carrier impact ionization. Traps distribution profile and simulated electric field shows the location of N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">it</sub> generation due to hot electron traps, and hot hole injection upon different HCI stress conditions. When HCI stress is done by gate voltages (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">g</sub> =1.8 to 5.5V) and high drain voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">d</sub> =60V), stress voltage dependent R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</sub> degradation is observed with negligible effect on V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> and projected SOA (>10yrs LT). For high gate voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">g</sub> =11V), trap generation is significant in the channel interface (N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">it</sub> ) and bulk oxide (N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ot</sub> ), drift/N-well area resulting a enormous V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> and R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</sub> degradation.