Abstract

Non-volatile memories are susceptible to special type of faults known as program disturb faults. Testing for such faults requires the application of stress tests which have long application time to distinguish faulty cells from non-faulty cells. In this paper we present a new sensing scheme that can be used with stress tests to allow for efficient detection of faulty cells based on the notion of margin reads. We demonstrate the efficiency of the margin-read approach for distinguishing between faulty and fault-free cells using electrical simulations.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.