Abstract
Based on first principles calculations, we studied the structural properties of group V elements P, As, Sb and Bi on the Si(0 0 1) surface. For one monolayer of the group V atoms on the Si(0 0 1) substrate, stress and stress anisotropy scaled almost linearly with atomic size, implying that the obvious source of surface stress was atomic size effect. We found that stress relief was responsible for the (2 × n) reconstruction of Sb and Bi on the Si(0 0 1) surface. Stress anisotropy could be tuned through zero and reversed in sign with n ranging from 10 to 5.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
