Abstract
A special mechanism of stress relaxation in nanocrystalline films is suggestedand theoretically described. The mechanism represents the interfacial slidingaccompanied by the formation of wedge disclination dipoles at grain boundaries innanocrystalline films. The wedge disclination dipoles release, in part, mismatchstresses generated at film–substrate boundaries. It is theoretically shown that thespecial relaxation mechanism is energetically favorable in various nanocrystallinefilms deposited onto single crystalline substrates (in particular, AlN/6H-SiC,GaN/6H-SiC, 3C-SiC/Si and Ni/Cu film/substrate systems) in wide ranges of theirparameters.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
