Abstract
Years of work have been dedicated to the optimization of thickstrain-relaxed buffers. Thanks to the use of graded Ge content layersbeneath the constant composition layers on top, threadingdislocations densities around 105 cm-2 have been obtained. Recentlyan innovative phenomenon has been observed concerning SiGe-On-Insulator (SGOI) layer relaxation. We propose to use this approachto obtain fully relaxed SGOI layers without dislocations in industrialconditions on 300mm wafers. This new approach would enable usto fabricate relaxed SGOI layers which are uniform in composition.Such an innovation would be relevant for several applications suchas, for instance, the re-epitaxy of Si0.5Ge0.5 layers.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
