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Abstract
Stress measurements were performed on sputtered carbon films deposited on Si substrates in the temperature range from room temperature to 350 °C. Both hydrogenated and nonhydrogenated carbon films, ∼100 nm in thickness, were investigated. The stress relaxation kinetics were investigated for films tested in air and in the presence of an inert environment. The experimental data show distinct differences for tests performed in these two environments. Microscopic examination revealed that films tested in air show local loss of carbon following a thermal cycle whereas the films tested in argon show good stability and remain well adhered to the substrate
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