Abstract
AbstractEffect of high temperature‐high pressure treatment on strain state of the lattice mismatched InAs layers grown on the GaAs substrate was investigated by means of X‐ray diffraction methods. The InAs layers were grown on (100) oriented GaAs by molecular beam epitaxy. Measurements of the rocking curve width and lattice parameters were carried out using high resolution diffractometer. Annealing of the InAs/GaAs structure performed at high pressure changes its strain state and defect structure. Especially, annealing at the growth temperature at high pressure was found to be effective in improvement of the structural perfection of the layer. It means that thin InAs layers having comparatively low dislocation density can be produced by high temperature ‐ high pressure procedure. The relative changes of threading dislocation density were sensitive to the temperature of the treatment, however they were independent of the primary defect structure of the samples.
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