Stress Induced in Al<sub>2</sub>O<sub>3</sub> Films as Deposited onto Al<sub>2</sub>O<sub>3</sub>TiC Substrate by RF Diode Sputtering

Abstract

Al2O3 films were deposited onto Al2O3-TiC substrates by RF diode sputtering. The Al2O3 films were deposited at various substrate bias voltages from -80 to -180 V, sputtering powers from 4 to 8 kW and operating pressures from 20 to 30 mTorr. The stress induced in Al2O3 films was measured. The results show that the stress induced in all prepared Al2O3 films is tensile stress. The stress slightly increased with increasing substrate bias voltage whereas it increased linearly with increasing operating pressure. However, the stress was almost constant as the sputtering was increased from 5 to 8 kW and significantly decreased as the sputtering power was decreased below 5 kW.