Abstract
The valence band structures of single and double p-GaAs/Al0.5Ga0.5As heterostructures under in-plane uniaxial compression have been calculated. Hole subbands are split in the single heterostructure and there is no splitting in the double one. The energy spectrum and Fermi surface were found to become strongly anisotropic under applied uniaxial compression. The electrical resistance decreases in the direction parallel to the compression and increases in the perpendicular direction.
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