Abstract
To develop a low‐stress dielectric thin film, a novel liquid‐phase deposition (LPD) technique utilizing silica‐saturated hydrofluosilicic solution with only added is proposed. Due to fluorine incorporation, the stress in as‐deposited LPD oxide can be as low as 83.3 MPa (tensile). Addition of greatly affects the stresses in as‐deposited LPD oxide: the less added, the lower the stress will be. The stress variations accompanying thermal cycling have also been clarified. Films deposited with a larger quantity of added exhibited larger stress variations (hysteresis). After ex situ annealing at around 600°C, the total stress decreased to near 0 MPa.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
