Abstract
A special method of stress imposing on semiconductor microcrystals/whiskers during their characterization at cryogenic temperatures has been developed and applied for the piezoresistance and piezo-magnetoresistance measurements at cryogenic temperatures down to 1.7 K. A set of substrates provided tensile and compressive stress of Si and Ge microcrystals. The method could be recommended for structurally perfect crystals at cryogenic temperatures; in this case a long-term stability of the properties is kept.
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