Abstract
Alkoxide-derived lead zirconate titanate thin films having Zr/Ti=50/50 to 60/40 compositions with different residual stress conditions were deposited on a Si wafer to clarify the effects of the residual stress on the morphotropic phase boundary shift. The residual stress condition was controlled to −0.1 to −0.9GPa by the design of the buffer layer structure on the Si wafer. Results show that the maximum effective piezoelectric constant d33 was obtained at 58/42 composition under −0.9GPa compressive residual stress condition. Moreover, the MPB composition shifted linearly to Zr-rich phase with increasing compressive residual stress.
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