Stress Engineered Coupling of IR Inactive Mode in CMOS Metamaterial Structures

Abstract

We report high temperature (up to 400 deg.) coupling of infrared (IR) inactive $> \mathbf{C}=\mathbf{C} mode in CMOS compatible refractory metamaterial filter and absorber structure by leveraging the carbon defects in TEOS (Tetraethyl orthosilicate) obtained PECVD SiO 2 thin film for the first time in the literature. Here, we confirm the role of strain gradient induced dipole moment in high stress configuration on the activation of otherwise inactive $> \mathbf{C}=\mathbf{C} vibration at IR.