Abstract
Crack free GaN films were grown on 1200×1200μm2 patterned Si (111) substrates and 36 light emitting diodes (LEDs) were fabricated in each pattern unit. Spatial distribution of the tensile stress in the pattern units and its influence on the LED performance are studied by micro-Raman and electroluminescence (EL). The Raman shift of the GaN E2 mode shows that the tensile stress is the maximum at the center, partially relaxed at the edge, and further relaxed at the corner. With the stress relaxation, the EL wavelength has a significant blue shift and the luminous intensity shows a great enhancement.
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