Abstract
We have studied the stress dependence of the switching field in the glass-coated FeNbSiB microwire. The stress dependence can be tailored by properly choosing the frequency of exciting magnetic field. At low frequencies, the switching field is weakly dependent on the mechanical stress, which is ideal for sensors of magnetic field or temperature. Increasing the frequency leads to the increase of the stress dependence of the switching field. The slope of the stress dependence is almost linear and the switching field increases its value from 128A/m at 0MPa to 242A/m at 160MPa.
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